GT1K2P15D5
Goford Semiconductor
SI3139KU6-TP
Part Number：
SI3139KU6-TP
Category：
Single FETs, MOSFETs
Manufacturer：
MCC (Micro Commercial Components)
Description：
DUAL P-CHANNEL MOSFET, DFN1010B-
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Drain to Source Voltage (Vdss) 20 V
- Rds On (Max) @ Id, Vgs 950mOhm @ 500mA, 10V
- Vgs (Max) ±12V
- Package / Case SOT-723
- Power Dissipation (Max) 450mW
- Gate Charge (Qg) (Max) @ Vgs 1.5 nC @ 4.5 V
- Vgs(th) (Max) @ Id 800mV @ 250µA
- Current - Continuous Drain (Id) @ 25°C 660mA (Ta)
- Supplier Device Package SOT-723
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5
- Input Capacitance (Ciss) (Max) @ Vds 73.1 pF @ 16 V
