GT1K2P15D5
Goford Semiconductor
SI3493BDV-T1-BE3
Part Number：
SI3493BDV-T1-BE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
P-CHANNEL 20-V (D-S) MOSFET
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Drain to Source Voltage (Vdss) 20 V
- Package / Case SOT-23-6 Thin, TSOT-23-6
- Vgs (Max) ±8V
- Vgs(th) (Max) @ Id 900mV @ 250µA
- Supplier Device Package 6-TSOP
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs 27.5mOhm @ 7A, 4.5V
- Gate Charge (Qg) (Max) @ Vgs 43.5 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds 1805 pF @ 10 V
- Power Dissipation (Max) 2.08W (Ta), 2.97W (Tc)
- Current - Continuous Drain (Id) @ 25°C 7A (Ta), 8A (Tc)
