GT1K2P15D5
Goford Semiconductor
SICW025N065H4-BP
Part Number：
SICW025N065H4-BP
Category：
Single FETs, MOSFETs
Manufacturer：
MCC (Micro Commercial Components)
Description：
SIC MOSFET,TO-247-4
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 650 V
- Power Dissipation (Max) 375W (Tc)
- Package / Case TO-247-4
- Technology SiCFET (Silicon Carbide)
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Current - Continuous Drain (Id) @ 25°C 107A (Tc)
- Supplier Device Package TO-247-4
- Rds On (Max) @ Id, Vgs 30mOhm @ 50A, 18V
- Vgs (Max) +18V, -5V
- Vgs(th) (Max) @ Id 4.5V @ 50mA
- Input Capacitance (Ciss) (Max) @ Vds 5740 pF @ 400 V
- Gate Charge (Qg) (Max) @ Vgs 275 nC @ 18 V
