GT1K2P15D5
Goford Semiconductor
SIDR570EP-T1-RE3
Part Number：
SIDR570EP-T1-RE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
N-CHANNEL 150 V (D-S) 175C MOSFE
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 150 V
- Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V
- Package / Case PowerPAK® SO-8
- Rds On (Max) @ Id, Vgs 7.9mOhm @ 20A, 10V
- Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
- Supplier Device Package PowerPAK® SO-8DC
- Input Capacitance (Ciss) (Max) @ Vds 3740 pF @ 75 V
- Power Dissipation (Max) 7.5W (Ta), 150W (Tc)
- Current - Continuous Drain (Id) @ 25°C 30.8A (Ta), 90.9A (Tc)
