GT1K2P15D5
Goford Semiconductor
SIHD14N60ET5-GE3
Part Number：
SIHD14N60ET5-GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
N-CHANNEL 600V
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Supplier Device Package DPAK
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Drain to Source Voltage (Vdss) 600 V
- Current - Continuous Drain (Id) @ 25°C 13A (Tc)
- Vgs (Max) ±30V
- Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
- Power Dissipation (Max) 147W (Tc)
- Rds On (Max) @ Id, Vgs 309mOhm @ 7A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 1205 pF @ 100 V
