GT1K2P15D5
Goford Semiconductor
SIL04P06YHE3-TP
Part Number：
SIL04P06YHE3-TP
Category：
Single FETs, MOSFETs
Manufacturer：
MCC (Micro Commercial Components)
Description：
P-CHANNEL MOSFET,SOT23-6L
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 150°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- FET Type P-Channel
- Drain to Source Voltage (Vdss) 60 V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Package / Case SOT-23-6
- Current - Continuous Drain (Id) @ 25°C 3.5A (Ta)
- Rds On (Max) @ Id, Vgs 85mOhm @ 4A, 10V
- Supplier Device Package SOT-23-6L
- Input Capacitance (Ciss) (Max) @ Vds 491 pF @ 25 V
- Gate Charge (Qg) (Max) @ Vgs 4.27 nC @ 4.5 V
- Power Dissipation (Max) 1.7W (Tj)
