GT1K2P15D5
Goford Semiconductor
SIR5812DP-T1-RE3
Part Number：
SIR5812DP-T1-RE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
MOSFET N-CH 80V 30A PPAK SO-8
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
- Rds On (Max) @ Id, Vgs 13.5mOhm @ 10A, 10V
- Drain to Source Voltage (Vdss) 80 V
- Supplier Device Package PowerPAK® SO-8
- Package / Case PowerPAK® SO-8
- Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
- Current - Continuous Drain (Id) @ 25°C 13A (Ta), 45.3A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 775 pF @ 40 V
- Power Dissipation (Max) 4.1W (Ta), 50W (Tc)
