GT1K2P15D5
Goford Semiconductor
SIRS4401DP-T1-GE3
Part Number：
SIRS4401DP-T1-GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
P-CHANNEL 40 V (D-S) MOSFET POWE
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Drain to Source Voltage (Vdss) 40 V
- Vgs(th) (Max) @ Id 2.3V @ 250µA
- Supplier Device Package PowerPAK® SO-8
- Package / Case PowerPAK® SO-8
- Rds On (Max) @ Id, Vgs 2.2mOhm @ 20A, 10V
- Power Dissipation (Max) 7.4W (Ta), 132W (Tc)
- Current - Continuous Drain (Id) @ 25°C 46.8A (Ta), 198A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 588 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 21850 pF @ 20 V
