GT1K2P15D5
Goford Semiconductor
SQJ123ELP-T1_GE3
Part Number：
SQJ123ELP-T1_GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
AUTOMOTIVE P-CHANNEL 12 V (D-S)
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- FET Type P-Channel
- Vgs(th) (Max) @ Id 1.5V @ 250µA
- Vgs (Max) ±8V
- Drain to Source Voltage (Vdss) 12 V
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
- Power Dissipation (Max) 375W (Tc)
- Supplier Device Package PowerPAK® SO-8
- Package / Case PowerPAK® SO-8
- Gate Charge (Qg) (Max) @ Vgs 180 nC @ 4.5 V
- Current - Continuous Drain (Id) @ 25°C 238A (Tc)
- Rds On (Max) @ Id, Vgs 4mOhm @ 10A, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds 11680 pF @ 6 V
