GT1K2P15D5
Goford Semiconductor
SQS120ELNW-T1_GE3
Part Number：
SQS120ELNW-T1_GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
AUTOMOTIVE N-CHANNEL 30 V (D-S)
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 88 nC @ 10 V
- Mounting Type Surface Mount, Wettable Flank
- Power Dissipation (Max) 119W (Tc)
- Current - Continuous Drain (Id) @ 25°C 192A (Tc)
- Rds On (Max) @ Id, Vgs 1.8mOhm @ 10A, 10V
- Supplier Device Package PowerPAK® 1212-8SLW
- Package / Case PowerPAK® 1212-8SLW
- Input Capacitance (Ciss) (Max) @ Vds 4590 pF @ 25 V
