GT1K2P15D5
Goford Semiconductor
SQW33N65EF-GE3
Part Number：
SQW33N65EF-GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
E SERIES POWER MOSFET WITH FAST
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Package / Case TO-247-3
- Supplier Device Package TO-247AD
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Current - Continuous Drain (Id) @ 25°C 34A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 173 nC @ 10 V
- Power Dissipation (Max) 375W (Tc)
- Rds On (Max) @ Id, Vgs 109mOhm @ 16.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 3972 pF @ 100 V
