GT1K2P15D5
Goford Semiconductor
SSM3J112TU,LF
Part Number：
SSM3J112TU,LF
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
MOSFET P-CH 30V 1.1A UFM
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- FET Type P-Channel
- Operating Temperature 150°C
- Current - Continuous Drain (Id) @ 25°C 1.1A (Ta)
- Drain to Source Voltage (Vdss) 30 V
- Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
- Power Dissipation (Max) 800mW (Ta)
- Package / Case 3-SMD, Flat Leads
- Supplier Device Package UFM
- Vgs(th) (Max) @ Id 1.8V @ 100µA
- Rds On (Max) @ Id, Vgs 390mOhm @ 500mA, 10V
- Input Capacitance (Ciss) (Max) @ Vds 86 pF @ 15 V
