GT1K2P15D5
Goford Semiconductor
SSM3K2615R,LF
Part Number：
SSM3K2615R,LF
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
MOSFET N-CH 60V 2A SOT23F
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade Automotive
- Qualification AEC-Q101
- Power Dissipation (Max) 1W (Ta)
- Drain to Source Voltage (Vdss) 60 V
- Operating Temperature 150°C (TJ)
- Package / Case SOT-23-3 Flat Leads
- Supplier Device Package SOT-23F
- Vgs(th) (Max) @ Id 2V @ 1mA
- Current - Continuous Drain (Id) @ 25°C 2A (Ta)
- Rds On (Max) @ Id, Vgs 300mOhm @ 1A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 10 V
- Drive Voltage (Max Rds On, Min Rds On) 3.3V, 10V
