GT1K2P15D5
Goford Semiconductor
SSM6K810R,LF
Part Number：
SSM6K810R,LF
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
SMALL SIGNAL MOSFET N-CH VDSS=10
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Package / Case 6-SMD, Flat Leads
- Current - Continuous Drain (Id) @ 25°C 3.5A (Ta)
- Power Dissipation (Max) 1.5W (Ta)
- Vgs(th) (Max) @ Id 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs 3.2 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 15 V
- Operating Temperature 175°C
- Rds On (Max) @ Id, Vgs 69mOhm @ 2A, 10V
- Supplier Device Package 6-TSOP-F
