GT1K2P15D5
Goford Semiconductor
STD9N65DM6AG
Part Number：
STD9N65DM6AG
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
DISCRETE
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Operating Temperature -55°C ~ 150°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Vgs (Max) ±25V
- Current - Continuous Drain (Id) @ 25°C 9A (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Power Dissipation (Max) 89W (Tc)
- Supplier Device Package TO-252 (DPAK)
- Gate Charge (Qg) (Max) @ Vgs 11.7 nC @ 10 V
- Vgs(th) (Max) @ Id 4.75V @ 250µA
- Rds On (Max) @ Id, Vgs 440mOhm @ 4.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 100 V
