GT1K2P15D5
Goford Semiconductor
STI47N60DM6AG
Part Number：
STI47N60DM6AG
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
POWER TRANSISTORS
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Operating Temperature -55°C ~ 150°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Drain to Source Voltage (Vdss) 600 V
- Current - Continuous Drain (Id) @ 25°C 36A (Tc)
- Vgs (Max) ±25V
- Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
- Power Dissipation (Max) 250W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
- Supplier Device Package TO-262 (I2PAK)
- Input Capacitance (Ciss) (Max) @ Vds 2350 pF @ 100 V
- Vgs(th) (Max) @ Id 4.75V @ 250µA
- Rds On (Max) @ Id, Vgs 80mOhm @ 18A, 10V
