GT1K2P15D5
Goford Semiconductor
STO68N65DM6
Part Number：
STO68N65DM6
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
N-CHANNEL 650 V, 53 MOHM TYP., 5
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
- Vgs (Max) ±25V
- Current - Continuous Drain (Id) @ 25°C 55A (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Power Dissipation (Max) 240W (Tc)
- Package / Case 8-PowerSFN
- Vgs(th) (Max) @ Id 4.75V @ 250µA
- Supplier Device Package TOLL (HV)
- Rds On (Max) @ Id, Vgs 65mOhm @ 27.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 3528 pF @ 100 V
