GT1K2P15D5
Goford Semiconductor
STW68N65DM6-4AG
Part Number：
STW68N65DM6-4AG
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
MOSFET N-CH 650V 72A TO247-4
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Operating Temperature -55°C ~ 150°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Vgs (Max) ±25V
- Power Dissipation (Max) 480W (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Current - Continuous Drain (Id) @ 25°C 72A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 118 nC @ 10 V
- Package / Case TO-247-4
- Rds On (Max) @ Id, Vgs 39mOhm @ 36A, 10V
- Supplier Device Package TO-247-4
- Vgs(th) (Max) @ Id 4.75V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds 5900 pF @ 100 V
