GT1K2P15D5
Goford Semiconductor
SUM90100E-GE3
Part Number：
SUM90100E-GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
N-CHANNEL 200-V (D-S) MOSFET D2P
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
- Supplier Device Package TO-263 (D2PAK)
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Current - Continuous Drain (Id) @ 25°C 150A (Tc)
- Power Dissipation (Max) 375W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
- Input Capacitance (Ciss) (Max) @ Vds 3930 pF @ 100 V
- Rds On (Max) @ Id, Vgs 11.4mOhm @ 16A, 10V
