GT1K2P15D5
Goford Semiconductor
SUP90100E-GE3
Part Number：
SUP90100E-GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
N-CHANNEL 200 V (D-S) MOSFET TO-
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Supplier Device Package TO-220AB
- Package / Case TO-220-3
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 150A (Tc)
- Power Dissipation (Max) 375W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
- Rds On (Max) @ Id, Vgs 10.9mOhm @ 16A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 3930 pF @ 100 V
