GT1K2P15D5
Goford Semiconductor
TK1R4F04PB,LXGQ
Part Number：
TK1R4F04PB,LXGQ
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
MOSFET N-CH 40V 160A TO220SM
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade Automotive
- Qualification AEC-Q101
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Drain to Source Voltage (Vdss) 40 V
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Gate Charge (Qg) (Max) @ Vgs 103 nC @ 10 V
- Power Dissipation (Max) 205W (Tc)
- Operating Temperature 175°C
- Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 10 V
- Current - Continuous Drain (Id) @ 25°C 160A (Ta)
- Supplier Device Package TO-220SM(W)
- Vgs(th) (Max) @ Id 3V @ 500µA
- Rds On (Max) @ Id, Vgs 1.9mOhm @ 80A, 6V
