GT1K2P15D5
Goford Semiconductor
TK6R9P08QM,RQ
Part Number：
TK6R9P08QM,RQ
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
UMOS10 DPAK 80V 6.9MOHM
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Supplier Device Package DPAK
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
- Power Dissipation (Max) 89W (Tc)
- Current - Continuous Drain (Id) @ 25°C 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Drain to Source Voltage (Vdss) 80 V
- Operating Temperature 175°C
- Vgs(th) (Max) @ Id 3.5V @ 500µA
- Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 40 V
- Rds On (Max) @ Id, Vgs 6.9mOhm @ 31A, 10V
