GT1K2P15D5
Goford Semiconductor
TK8R2E06PL,S1X
Part Number：
TK8R2E06PL,S1X
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
PB-F POWER MOSFET TRANSISTOR TO-
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-220-3
- Drain to Source Voltage (Vdss) 60 V
- Supplier Device Package TO-220
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 50A (Tc)
- Power Dissipation (Max) 81W (Tc)
- Operating Temperature 175°C
- Rds On (Max) @ Id, Vgs 8.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id 2.5V @ 300µA
- Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 30 V
