GT1K2P15D5
Goford Semiconductor
TN2130MF-G-VAO
Part Number：
TN2130MF-G-VAO
Category：
Single FETs, MOSFETs
Manufacturer：
Microchip Technology
Description：
MOSFET, N-CHANNEL ENHANCEMENT-MO
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade Automotive
- Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V
- Vgs(th) (Max) @ Id 2.4V @ 1mA
- Power Dissipation (Max) 360mW (Ta)
- Qualification AEC-Q100
- Drain to Source Voltage (Vdss) 300 V
- Drive Voltage (Max Rds On, Min Rds On) 4.5V
- Operating Temperature -55°C ~ 150°C (TA)
- Package / Case 6-VDFN Exposed Pad
- Supplier Device Package 6-DFN (2x2)
- Current - Continuous Drain (Id) @ 25°C 85mA (Tj)
- Rds On (Max) @ Id, Vgs 25Ohm @ 120mA, 4.5V
