GT1K2P15D5
Goford Semiconductor
TN5325N8-G
Part Number：
TN5325N8-G
Category：
Single FETs, MOSFETs
Manufacturer：
Microchip Technology
Description：
MOSFET N-CH 250V 316MA TO243AA
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Operating Temperature -
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-243AA
- Drain to Source Voltage (Vdss) 250 V
- Vgs(th) (Max) @ Id 2V @ 1mA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Power Dissipation (Max) 1.6W (Ta)
- Rds On (Max) @ Id, Vgs 7Ohm @ 1A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 110 pF @ 25 V
- Supplier Device Package TO-243AA (SOT-89)
- Current - Continuous Drain (Id) @ 25°C 316mA (Tj)
