GT1K2P15D5
Goford Semiconductor
TO252MDD4N65DS
Part Number：
TO252MDD4N65DS
Category：
Single FETs, MOSFETs
Manufacturer：
NextGen Components
Description：
MOSFET TO-252 N 650V 4A
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Current - Continuous Drain (Id) @ 25°C 4A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Rds On (Max) @ Id, Vgs 2.8Ohm @ 2A, 10V
