GT1K2P15D5
Goford Semiconductor
TP65H050WSQA
Part Number：
TP65H050WSQA
Category：
Single FETs, MOSFETs
Manufacturer：
Transphorm
Description：
GANFET N-CH 650V 36A TO247-3
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
- Power Dissipation (Max) 150W (Tc)
- Package / Case TO-247-3
- Current - Continuous Drain (Id) @ 25°C 36A (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Supplier Device Package TO-247-3
- Rds On (Max) @ Id, Vgs 60mOhm @ 25A, 10V
- Technology GaNFET (Cascode Gallium Nitride FET)
- Vgs(th) (Max) @ Id 4.8V @ 700µA
- Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 400 V
