GT1K2P15D5
Goford Semiconductor
TP65H070LDG
Part Number：
TP65H070LDG
Category：
Single FETs, MOSFETs
Manufacturer：
Transphorm
Description：
GANFET N-CH 650V 25A 3PQFN
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Discontinued at
- Mounting Type Surface Mount
- FET Type N-Channel
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 25A (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Power Dissipation (Max) 96W (Tc)
- Rds On (Max) @ Id, Vgs 85mOhm @ 16A, 10V
- Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V
- Technology GaNFET (Cascode Gallium Nitride FET)
- Supplier Device Package 3-PQFN (8x8)
- Package / Case 3-PowerDFN
- Vgs(th) (Max) @ Id 4.8V @ 700µA
- Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 400 V
