GT1K2P15D5
Goford Semiconductor
TP65H480G4JSGB-TR
Part Number：
TP65H480G4JSGB-TR
Category：
Single FETs, MOSFETs
Manufacturer：
Transphorm
Description：
GANFET N-CH 650V 3.6A QFN5X6
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Vgs (Max) ±10V
- Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 5 nC @ 10 V
- Package / Case 8-PowerTDFN
- Supplier Device Package 8-PQFN (5x6)
- Technology GaNFET (Gallium Nitride)
- Vgs(th) (Max) @ Id 2.8V @ 500µA
- Power Dissipation (Max) 13.2W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 6V
- Rds On (Max) @ Id, Vgs 560mOhm @ 3A, 6V
- Input Capacitance (Ciss) (Max) @ Vds 414 pF @ 400 V
