GT1K2P15D5
Goford Semiconductor
TPCC8105,L1Q
Part Number：
TPCC8105,L1Q
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
PB-F POWER MOSFET TRANSISTOR TSO
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- FET Type P-Channel
- Operating Temperature 150°C
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 76 nC @ 10 V
- Package / Case 8-VDFN Exposed Pad
- Current - Continuous Drain (Id) @ 25°C 23A (Ta)
- Vgs (Max) +20V, -25V
- Power Dissipation (Max) 700mW (Ta), 30W (Tc)
- Supplier Device Package 8-TSON Advance (3.3x3.3)
- Vgs(th) (Max) @ Id 2V @ 500µA
- Input Capacitance (Ciss) (Max) @ Vds 3240 pF @ 10 V
- Rds On (Max) @ Id, Vgs 7.8mOhm @ 11.5A, 10V
