GT1K2P15D5
Goford Semiconductor
TPW2900ENH,L1Q
Part Number：
TPW2900ENH,L1Q
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
PB-F POWER MOSFET TRANSISTOR DSO
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
- Operating Temperature 150°C
- Current - Continuous Drain (Id) @ 25°C 33A (Tc)
- Vgs(th) (Max) @ Id 4V @ 1mA
- Package / Case 8-PowerVDFN
- Power Dissipation (Max) 800mW (Ta), 142W (Tc)
- Supplier Device Package 8-DSOP Advance
- Rds On (Max) @ Id, Vgs 29mOhm @ 16.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 100 V
