GT1K2P15D5
Goford Semiconductor
TQM110NB04CR RLG
Part Number：
TQM110NB04CR RLG
Category：
Single FETs, MOSFETs
Manufacturer：
Taiwan Semiconductor Corporation
Description：
MOSFET N-CH 40V 12A/54A 8PDFNU
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
- Drain to Source Voltage (Vdss) 40 V
- Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
- Package / Case 8-PowerTDFN
- Rds On (Max) @ Id, Vgs 11mOhm @ 12A, 10V
- Mounting Type Surface Mount, Wettable Flank
- Vgs(th) (Max) @ Id 3.8V @ 250µA
- Current - Continuous Drain (Id) @ 25°C 12A (Ta), 54A (Tc)
- Power Dissipation (Max) 3.1W (Ta), 68W (Tc)
- Supplier Device Package 8-PDFNU (5x6)
- Input Capacitance (Ciss) (Max) @ Vds 1352 pF @ 20 V
