GT1K2P15D5
Goford Semiconductor
TQM250NB06CV RGG
Part Number：
TQM250NB06CV RGG
Category：
Single FETs, MOSFETs
Manufacturer：
Taiwan Semiconductor Corporation
Description：
MOSFET
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 150°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Drain to Source Voltage (Vdss) 60 V
- Current - Continuous Drain (Id) @ 25°C 26A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
- Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
- Package / Case 8-PowerWDFN
- Vgs(th) (Max) @ Id 3.8V @ 250µA
- Power Dissipation (Max) 2.4W (Ta), 36W (Tc)
- Supplier Device Package 8-PDFN (3.15x3.1)
- Rds On (Max) @ Id, Vgs 25mOhm @ 13A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 1221 pF @ 30 V
