GT1K2P15D5
Goford Semiconductor
TSM160N10LCR RLG
Part Number：
TSM160N10LCR RLG
Category：
Single FETs, MOSFETs
Manufacturer：
Taiwan Semiconductor Corporation
Description：
MOSFET N-CH 100V 46A 8PDFN
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Current - Continuous Drain (Id) @ 25°C 46A (Tc)
- Power Dissipation (Max) 83W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 73 nC @ 10 V
- Package / Case 8-PowerTDFN
- Rds On (Max) @ Id, Vgs 16mOhm @ 8A, 10V
- Supplier Device Package 8-PDFN (5x6)
- Input Capacitance (Ciss) (Max) @ Vds 4431 pF @ 50 V
