GT1K2P15D5
Goford Semiconductor
TSM3N100CP ROG
Part Number：
TSM3N100CP ROG
Category：
Single FETs, MOSFETs
Manufacturer：
Taiwan Semiconductor Corporation
Description：
MOSFET N-CH 1000V 2.5A TO252
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Discontinued at
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Operating Temperature -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Drain to Source Voltage (Vdss) 1000 V
- Vgs (Max) ±30V
- Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
- Vgs(th) (Max) @ Id 5.5V @ 250µA
- Supplier Device Package TO-252 (DPAK)
- Power Dissipation (Max) 99W (Tc)
- Rds On (Max) @ Id, Vgs 6Ohm @ 1.25A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 664 pF @ 25 V
