GT1K2P15D5
Goford Semiconductor
TSM60NE048PW C0G
Part Number：
TSM60NE048PW C0G
Category：
Single FETs, MOSFETs
Manufacturer：
Taiwan Semiconductor Corporation
Description：
MOSFET
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-247-3
- Drain to Source Voltage (Vdss) 600 V
- Current - Continuous Drain (Id) @ 25°C 61A (Tc)
- Vgs (Max) ±30V
- Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V
- Supplier Device Package TO-247
- Power Dissipation (Max) 431W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V, 12V
- Vgs(th) (Max) @ Id 6V @ 4.6mA
- Rds On (Max) @ Id, Vgs 44mOhm @ 20A, 12V
- Input Capacitance (Ciss) (Max) @ Vds 5023 pF @ 300 V
