GT1K2P15D5
Goford Semiconductor
TSM80N1R2CL C0G
Part Number：
TSM80N1R2CL C0G
Category：
Single FETs, MOSFETs
Manufacturer：
Taiwan Semiconductor Corporation
Description：
MOSFET N-CH 800V 5.5A TO262S
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
- Drain to Source Voltage (Vdss) 800 V
- Power Dissipation (Max) 110W (Tc)
- Vgs (Max) ±30V
- Package / Case TO-262-3 Short Leads, I2PAK
- Gate Charge (Qg) (Max) @ Vgs 19.4 nC @ 10 V
- Supplier Device Package TO-262S (I2PAK)
- Input Capacitance (Ciss) (Max) @ Vds 685 pF @ 100 V
- Rds On (Max) @ Id, Vgs 1.2Ohm @ 1.8A, 10V
