GT1K2P15D5
Goford Semiconductor
TSM900N06CW
Part Number：
TSM900N06CW
Category：
Single FETs, MOSFETs
Manufacturer：
Taiwan Semiconductor Corporation
Description：
MOSFET N-CHANNEL 60V 6A SOT223
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
- Operating Temperature 150°C (TJ)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Package / Case TO-261-4, TO-261AA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Current - Continuous Drain (Id) @ 25°C 6A (Tc)
- Rds On (Max) @ Id, Vgs 90mOhm @ 3A, 10V
- Supplier Device Package SOT-223
- Power Dissipation (Max) 7.8W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 525 pF @ 30 V
