GT1K2P15D5
Goford Semiconductor
TW083N65C,S1F
Part Number：
TW083N65C,S1F
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
G3 650V SIC-MOSFET TO-247 83MOH
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-247-3
- Current - Continuous Drain (Id) @ 25°C 30A (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Supplier Device Package TO-247
- Power Dissipation (Max) 111W (Tc)
- Operating Temperature 175°C
- Technology SiCFET (Silicon Carbide)
- Vgs (Max) +25V, -10V
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Gate Charge (Qg) (Max) @ Vgs 28 nC @ 18 V
- Rds On (Max) @ Id, Vgs 113mOhm @ 15A, 18V
- Vgs(th) (Max) @ Id 5V @ 600µA
- Input Capacitance (Ciss) (Max) @ Vds 873 pF @ 400 V
