GT1K2P15D5
Goford Semiconductor
UF4SC120030B7SSR
Part Number：
UF4SC120030B7SSR
Category：
Single FETs, MOSFETs
Manufacturer：
onsemi
Description：
1200V/30MO,SICFET,G4,TO263-7
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Drain to Source Voltage (Vdss) 1200 V
- Drive Voltage (Max Rds On, Min Rds On) 12V
- Power Dissipation (Max) 341W (Tc)
- Technology SiCFET (Cascode SiCJFET)
- Vgs(th) (Max) @ Id 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs 37.8 nC @ 15 V
- Rds On (Max) @ Id, Vgs 39mOhm @ 20A, 12V
- Supplier Device Package D2PAK-7L
- Current - Continuous Drain (Id) @ 25°C 56A (Tj)
- Input Capacitance (Ciss) (Max) @ Vds 1450 pF @ 800 V
