GT1K2P15D5
Goford Semiconductor
UJ3C120070K4S
Part Number：
UJ3C120070K4S
Category：
Single FETs, MOSFETs
Manufacturer：
onsemi
Description：
1200V/70MOHM, N-OFF SIC CASCODE,
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Vgs (Max) ±25V
- Drain to Source Voltage (Vdss) 1200 V
- Package / Case TO-247-4
- Drive Voltage (Max Rds On, Min Rds On) 12V
- Technology SiCFET (Silicon Carbide)
- Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 100 V
- Supplier Device Package TO-247-4
- Current - Continuous Drain (Id) @ 25°C 34.5A (Tc)
- Vgs(th) (Max) @ Id 6V @ 10mA
- Power Dissipation (Max) 254.2W (Tc)
- Rds On (Max) @ Id, Vgs 90mOhm @ 20A, 12V
- Gate Charge (Qg) (Max) @ Vgs 46 nC @ 15 V
