GT1K2P15D5
Goford Semiconductor
VN2210N2
Part Number：
VN2210N2
Category：
Single FETs, MOSFETs
Manufacturer：
Microchip Technology
Description：
MOSFET N-CH 100V 1.7A TO39
Packaging：
Bag
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-205AD, TO-39-3 Metal Can
- Supplier Device Package TO-39
- Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
- Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 25 V
- Rds On (Max) @ Id, Vgs 350mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id 2.4V @ 10mA
- Current - Continuous Drain (Id) @ 25°C 1.7A (Tj)
- Power Dissipation (Max) 360mW (Tc)
