GT1K2P15D5
Goford Semiconductor
XP10NA011J
Part Number：
XP10NA011J
Category：
Single FETs, MOSFETs
Manufacturer：
YAGEO XSemi
Description：
MOSFET N-CH 100V 48.5A TO251S
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
- Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Rds On (Max) @ Id, Vgs 11mOhm @ 30A, 10V
- Supplier Device Package TO-251S
- Current - Continuous Drain (Id) @ 25°C 48.5A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 2288 pF @ 80 V
- Power Dissipation (Max) 1.13W (Ta), 50W (Tc)
