GT1K2P15D5
Goford Semiconductor
XP10P135YT
Part Number：
XP10P135YT
Category：
Single FETs, MOSFETs
Manufacturer：
YAGEO XSemi
Description：
MOSFET P CH -100V -3.4A PMPAK3X
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs(th) (Max) @ Id 3V @ 250µA
- Power Dissipation (Max) 3.13W (Ta)
- Package / Case 8-PowerTDFN
- Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 50 V
- Gate Charge (Qg) (Max) @ Vgs 46.4 nC @ 10 V
- Supplier Device Package 8-PMPAK (3x3)
- Rds On (Max) @ Id, Vgs 135mOhm @ 3A, 10V
- Current - Continuous Drain (Id) @ 25°C 3.4A (Ta), 9.5A (Tc)
