GT1K2P15D5
Goford Semiconductor
XP2P053N
Part Number：
XP2P053N
Category：
Single FETs, MOSFETs
Manufacturer：
YAGEO XSemi
Description：
MOSFET P-CH 20V 4.2A SOT23
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-236-3, SC-59, SOT-23-3
- FET Type P-Channel
- Drain to Source Voltage (Vdss) 20 V
- Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
- Vgs (Max) ±12V
- Gate Charge (Qg) (Max) @ Vgs 16 nC @ 4.5 V
- Power Dissipation (Max) 1.25W (Ta)
- Vgs(th) (Max) @ Id 1.2V @ 250µA
- Current - Continuous Drain (Id) @ 25°C 4.2A (Ta)
- Supplier Device Package SOT-23
- Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 10 V
- Rds On (Max) @ Id, Vgs 53mOhm @ 4.5A, 10V
