English
English
Home
Classification
Brand
News
Inquiry
About Us
Contact Us
Copyright@2026 All Rights Reserved
Technical Support Cluster Technology
Sitemap
English
English
Home
Classification
Brand
News
Inquiry
About Us
Contact Us
Home
/
Products
/
XP3N1R0MT
XP3N1R0MT
Part Number:
XP3N1R0MT
Category:
Single FETs, MOSFETs
Manufacturer:
YAGEO XSemi
Description:
FET N-CH 30V 54.2A 245A PMPAK
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Quantity
RFQ Now
Add to RFQ
Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
30 V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 4.5 V
Package / Case
8-PowerLDFN
Rds On (Max) @ Id, Vgs
1.05mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C
54.2A (Ta), 245A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
12320 pF @ 15 V
Power Dissipation (Max)
5W (Ta), 104W (Tc)
Supplier Device Package
PMPAK® 5 x 6
Recommended Models
GT1K2P15D5
Goford Semiconductor
GT040N04T
Goford Semiconductor
CMSP3407T6-HF
Comchip Technology
IGT65R035D2ATMA1
Infineon Technologies
AC3M0060065D
APSEMI
AC3M0025065D
APSEMI
AC3M0040120D
APSEMI
AC3M0075120D
APSEMI
AC2M0040120D
APSEMI
AC3M0040120K
APSEMI
+852 64184651
selena@mpslimited.hk
Add to RFQ
Back to top