GT1K2P15D5
Goford Semiconductor
XP60SL115DR
Part Number：
XP60SL115DR
Category：
Single FETs, MOSFETs
Manufacturer：
YAGEO XSemi
Description：
MOSFET N-CH 600V 28A TO262
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 28A (Tc)
- Drain to Source Voltage (Vdss) 600 V
- Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
- Supplier Device Package TO-262
- Vgs(th) (Max) @ Id 5V @ 250µA
- Power Dissipation (Max) 2W (Ta), 178W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V
- Rds On (Max) @ Id, Vgs 115mOhm @ 9.6A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 5120 pF @ 100 V
