GT1K2P15D5
Goford Semiconductor
XP6NA1R7CMT
Part Number：
XP6NA1R7CMT
Category：
Single FETs, MOSFETs
Manufacturer：
YAGEO XSemi
Description：
FET N-CH 60V 41.6A 190A PMPAK
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V
- Rds On (Max) @ Id, Vgs 1.7mOhm @ 20A, 10V
- Package / Case 8-PowerLDFN
- Input Capacitance (Ciss) (Max) @ Vds 8800 pF @ 50 V
- Power Dissipation (Max) 5W (Ta), 104W (Tc)
- Supplier Device Package PMPAK® 5 x 6
- Current - Continuous Drain (Id) @ 25°C 41.6A (Ta), 190A (Tc)
