GT1K2P15D5
Goford Semiconductor
XP83T03GJB
Part Number：
XP83T03GJB
Category：
Single FETs, MOSFETs
Manufacturer：
YAGEO XSemi
Description：
MOSFET N-CH 30V 75A TO251S
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Last Time Buy
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Power Dissipation (Max) 60W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs(th) (Max) @ Id 3V @ 250µA
- Drain to Source Voltage (Vdss) 30 V
- Current - Continuous Drain (Id) @ 25°C 75A (Tc)
- Rds On (Max) @ Id, Vgs 6mOhm @ 40A, 10V
- Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
- Gate Charge (Qg) (Max) @ Vgs 34 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 1840 pF @ 25 V
- Supplier Device Package TO-251S
