GT1K2P15D5
Goford Semiconductor
XPN9R614MC,L1XHQ
Part Number：
XPN9R614MC,L1XHQ
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
MOSFET P-CH 40V 40A 8TSON
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade Automotive
- Qualification AEC-Q101
- FET Type P-Channel
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
- Drain to Source Voltage (Vdss) 40 V
- Package / Case 8-PowerVDFN
- Current - Continuous Drain (Id) @ 25°C 40A (Ta)
- Operating Temperature 175°C
- Vgs (Max) +10V, -20V
- Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 10 V
- Rds On (Max) @ Id, Vgs 9.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id 2.1V @ 500µA
- Power Dissipation (Max) 840mW (Ta), 100W (Tc)
- Supplier Device Package 8-TSON Advance-WF (3.1x3.1)
